All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping? (Adv. Mater. Interfaces 10/2022)

Charge Transport in Organic Field-Effect Transistors In article number 2101701, Lukas Renn, Thomas Weitz, and co-workers develop organic transistor devices consisting of a monolayer-thin perylene-diimide n-type semiconductor on rectangular shaped h-BN flake. For some the semiconducting film is encapsulated between layers by stamping an additional flake top. transport measurements show signs interfacial trapping, despite trap-free substrate, suggesting contaminants are present.